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symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 110 i d @ t c = 100c continuous drain current, v gs @ 10v 69 a i dm pulsed drain current 440 p d @t c = 25c maximum power dissipation 120 w p d @t a = 25c maximum power dissipation 3.1 w linear derating factor 0.9 6 w/c t j , t stg junction and storage temperature range -55 to + 150 c www.irf.com 1 irf3711 irf3711s irf3711l smps mosfet hexfet power mosfet v dss r ds(on) max i d 20v 6.0m ? 110a notes through are on page 11 absolute maximum ratings d 2 pak irf3711s to-220ab irf3711 to-262 irf3711l thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.04 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount) ??? 40 applications benefits ultra-low gate impedance very low rds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for server processor power synchronous fet optimized for synchronous buck converters including capacitive induced turn-on immunity pd- 94062c
2 www.irf.com irf3711/3711s/3711l symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.88 1.3 v t j = 25c, i s = 30a, v gs = 0v ??? 0.82 ??? t j = 125c, i s = 30a, v gs = 0v t rr reverse recovery time ??? 50 75 ns t j = 25c, i f = 16a, v r =10v q rr reverse recovery charge ??? 61 92 nc di/dt = 100a/s t rr reverse recovery time ??? 48 72 ns t j = 125c, i f = 16a, v r =10v q rr reverse recovery charge ??? 65 98 nc di/dt = 100a/s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 460 mj i ar avalanche current ??? 30 a avalanche characteristics s d g diode characteristics 110 440 symbol parameter min. typ. max. units conditions g fs forward transconductance 53 ??? ??? s v ds = 16v, i d = 30a q g total gate charge ??? 29 44 i d = 15a q gs gate-to-source charge ??? 7.3 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 8.9 ??? v gs = 4.5v q oss output gate charge ??? 33 ??? v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 12 ??? v dd = 10v t r rise time ??? 220 ??? i d = 30a t d(off) turn-off delay time ??? 17 ??? r g = 1.8 ? t f fall time ??? 12 ??? v gs = 4.5v c iss input capacitance ??? 2980 ??? v gs = 0v c oss output capacitance ??? 1770 ??? pf v ds = 10v c rss reverse transfer capacitance ??? 280 ??? ? = 1.0mhz v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c reference to 25c, i d = 1ma ??? 4.7 6.0 v gs = 10v, i d = 15a ??? 6.2 8.5 v gs = 4.5v, i d = 12a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ?
www.irf.com 3 irf3711/3711s/3711l fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 110a
4 www.irf.com irf3711/3711s/3711l fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 20 40 60 80 0 2 4 6 8 10 12 14 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 30a v = 10v ds v = 16v ds
www.irf.com 5 irf3711/3711s/3711l fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package
6 www.irf.com irf3711/3711s/3711l 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 19a 30a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v
www.irf.com 7 irf3711/3711s/3711l p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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8 www.irf.com irf3711/3711s/3711l lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs.

dimensions are shown in millimeters (inches) e x a m p l e : t h i s i s a n i r f 1 0 1 0 l o t c o d e 1 7 8 9 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " i n t e r n a t i o n a l r e c t i f i e r l o g o a s s e m b l y l o t c o d e p a r t n u m b e r d a t e c o d e y e a r 7 = 1 9 9 7 w e e k 1 9 l i n e c
www.irf.com 9 irf3711/3711s/3711l

f 5 3 0 s t h i s i s a n i r f 5 3 0 s w i t h l o t c o d e 8 0 2 4 a s s e m b l e d o n w w 0 2 , 2 0 0 0 i n t h e a s s e m b l y l i n e " l " a s s e m b l y l o t c o d e i n t e r n a t i o n a l r e c t i f i e r l o g o p a r t n u m b e r d a t e c o d e y e a r 0 = 2 0 0 0 w e e k 0 2 l i n e l
10 www.irf.com irf3711/3711s/3711l to-262 part marking information to-262 package outline e x a m p l e : t h i s i s a n i r l 3 1 0 3 l l o t c o d e 1 7 8 9 a s s e m b l y p a r t n u m b e r d a t e c o d e w e e k 1 9 l i n e c l o t c o d e y e a r 7 = 1 9 9 7 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " l o g o r e c t i f i e r i n t e r n a t i o n a l
www.irf.com 11 irf3711/3711s/3711l repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.0mh r g = 25 ? , i as = 30a. pulse width 400s; duty cycle 2%. this is only applied to to-220ab package

3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 5/03

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